Technical FAQs 4

Why are IGBT and Diode Modules made thinner and miniaturized?

The IGBT and diode devices that constitute these modules have been made thinner and miniaturized to optimize the device structure. This has reduced the power loss during inverter operation compared with the conventional products (Fuji Electric's 6th-generation V Series)

What is IGBT in a solar inverter?

IGBT. A typical implementation of a solar inverter employs a full-bridge topology using four switches (Fig. 2). Here, Q1 and Q3 are designated as high-side IGBTs while Q2 and Q4 are des-ignated as low-side IGBTs.

Are insulated-gate bipolar transistors a good choice for solar inverter applications?

For solar inverter applications, it is well known that insulated-gate bipolar transistors (IGBTs) ofer benefits compared to other types of power devices, like high-current-carrying capability, gate control using voltage instead of current and the ability to match the co-pack diode with the IGBT.

What is a 4th IGBT?

The fourth IGBT is a trench-gate IGBT optimized to deliver low con-duction and switching losses for high-frequency switching such as in solar inverter applications. An IGBT is basically a bipolar junction transistor (BJT) with a metal oxide semiconductor gate structure.

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